Aizhen Li
Chinese Academy of Sciences
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Primary Section: 31, Engineering Sciences Membership Type:
International Member
(elected 2007)
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Research Interests
I have been studying compound semiconductor materials for 45 years. Since 1980, my research interests has been focused on III-V compound semiconductor quantum structures for high speed electronic heterojunction bipolar transistors (HBTs), high mobility transistors (HEMTs), and optoelectronic interband bipolar multi-quantum well lasers (MQWLDs) and photodetectors (PDs) using molecular beam epitaxy (MBE) crystal growth technology. I have been studying impurity engineering, band engineering, the dispersion mechanisms caused by mid-far infrared radiation, and MBE growth mechanisms mainly on GaAs-based, GaSb-based and InP-based lattice-matched materials. More recently, my special attention has been on impurity engineering and band engineering covering from lattice matched materials to high strained-relaxed lattice-mismatched materials. Our aim is to establish a fundamental model that connects the impurity engineering with band structures in order to optimize structure design and MBE growth conditions for mid-far infrared intersubband unipolar quantum cascade lasers (QCLs). We also pay particular emphasis on the thermal management study for QCL. All these research topics are essential for microwave transmision, wireless communication, trace gas sensing for moritoring chemical processing, pollution, homeland security, and medical imaging.
