Loren N. Pfeiffer

Our laboratory at Princeton is dedicated to the Molecular Beam Epitaxial growth of gallium arsenide crystals of the highest quality. In magneto-transport experiments aluminum gallium arsenide-gallium arsenide hetero-structures within these crystals have already shown the highest electronic mobility (a measure of perfection and purity) of any semiconductor, and have become an indispensable workbench for the discovery of new phenomena in low dimensional semiconductor physics. To enable additional new discoveries in condensed matter physics, we are continually improving the perfection of this material and its interfaces by reducing the number of impurity atoms and crystal defects. We also have an ongoing program to design new low dimensional structures that better screen the defects that remain.